THE CHEMICAL VAPOR-DEPOSITION OF SIO2 FROM TEOS

被引:25
作者
CROWELL, JE [1 ]
TEDDER, LL [1 ]
CHO, HC [1 ]
CASCARANO, FM [1 ]
LOGAN, MA [1 ]
机构
[1] LAM RES CORP,ADV RES CTR,SAN DIEGO,CA 92126
关键词
D O I
10.1016/0368-2048(90)80299-P
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The dissociative adsorption and thermal decomposition of tetraethoxysilane, TEOS, has been studied on Si(100) and SiO2. TEOS reacts with either surface at elevated temperatures to produce a mixture of di- and triethoxysiloxanes. These intermediates decompose in vacuum to evolve ethylene and deposit SiO2. Strong similarities are evident in the decomposition of TEOS on both surfaces.
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收藏
页码:1097 / 1104
页数:8
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