Behavior of defects in heavily boron doped Czochralski silicon

被引：11

作者：

Ono, T ^{[1
]}

Asayama, E ^{[1
]}

Horie, H ^{[1
]}

Hourai, M ^{[1
]}

Sano, M ^{[1
]}

Tsuya, R ^{[1
]}

Nakai, K ^{[1
]}

机构：

[1] EHIME UNIV, FAC ENGN, DEPT MAT SCI & ENGN, MATSUYAMA, EHIME 790, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 3A期

关键词：

Czochralski-silicon; heavily boron doped silicon; defect behavior; precipitate morphology; transmission electron microscopy;

D O I：

10.1143/JJAP.36.L249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defect behaviors in heavily boron doped silicon, with boron concentration ranging from 7.1 x 10(17) to 3.1 x 10(19) atoms/cm(3), were studied using transmission electron microscopy. The oxygen precipitation and the change of the precipitate morphology from plate to polyhedral were observed to be enhanced with increasing boron concentration. However: in wafers with the highest boron concentration, precipitate density decreased, and aggregations of small polyhedral precipitates on the {110} planes were observed. It was also found that as the boron concentration was increased, the precipitate size reduced and the type of secondary induced defects changed from punching-out dislocations to stacking faults due to the reduction in a crystal lattice strain.

引用

页码：L249 / L252

页数：4

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