Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S

被引：13

作者：

Bolorizadeh, MA

Ruffell, S ^{[1
]}

Mitchell, IV

Gwilliam, R

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[2] Shahid Bahonar Univ, Dept Phys, Kerman, Iran

[3] Univ Surrey, EPSRC, Ion Beam Ctr, Surrey GU2 7RX, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 225卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

ultralow-energy ion implantation; nuclear reaction analysis; secondary ion mass spectrometry;

D O I：

10.1016/j.nimb.2004.04.180

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Concentration profiles of ultra-shallow phosphorus implants in silicon have been extracted through use of time-of-flight SIMS in combination with nuclear reaction analysis. The phosphorus implants spanned the energy range 1-30 keV with fluences from 1e13 to 1e15 cm(-2). The resonance in the nuclear reaction P-31(alpha,p(0))S-34 at incident alpha particle energy 4.96 MeV was used to measure the total retained phosphorus for an implant fluence of 1e15 cm(-2), hence quantifying the associated SIMS profile. For lower fluence implants, absolute profiles were recovered from the SIMS data by scaling the profile integrals. Over the implant energy and fluence ranges we have used we find no evidence for loss of phosphorus due to self-sputtering. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：345 / 352

页数：8