Divergence-narrowed external-cavity broad-area laser-diode array

被引:9
作者
Zheng, YJ [1 ]
Gao, X [1 ]
Miyajima, H [1 ]
Kan, HF [1 ]
机构
[1] Hamamatsu Photon KK, Cent Res Lab, Shizuoka 4348601, Japan
关键词
D O I
10.1063/1.1715131
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate a divergence-narrowed broad-area laser-diode array (LDA) with an external-cavity configuration that consists of a beam-transformation system and an off-axis reflecting mirror. Sixteen off-axis external-cavity laser diodes are formed for the high-power LDA. At a drive current of 21.2 A (four times the threshold current), the divergence angle full width at half maximum of the slow axis is reduced from 7.26degrees without the external cavity to 1.45degrees with the external cavity. The external-cavity LDA achieves a cw power output of 9.8 W, which is 60% of the free-running LDA. (C) 2004 American Institute of Physics.
引用
收藏
页码:6489 / 6491
页数:3
相关论文
共 6 条
[1]  
Lissotschenko Vitalij, Patent-No, Patent No. [US 6,471,372 B1, 6471372]
[2]   Single-mode operation of a broad-area semiconductor laser with an anamorphic external cavity: experimental and numerical results [J].
Mailhot, S ;
Champagne, Y ;
McCarthy, N .
APPLIED OPTICS, 2000, 39 (36) :6806-6813
[3]   Paraxial-misalignment insensitive external-cavity semiconductor-laser array emitting near-diffraction limited single-lobed beam [J].
Pillai, RMR ;
Garmire, EM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :996-1008
[4]   External resonator design for high-power laser diodes that yields 400 mW of TEM00 power [J].
Raab, V ;
Menzel, R .
OPTICS LETTERS, 2002, 27 (03) :167-169
[5]   Tuning high-power laser diodes with as much as 0.38 W of power and M2=1.2 over a range of 32 nm with 3-GHz bandwidth [J].
Raab, V ;
Skoczowsky, D ;
Menzel, R .
OPTICS LETTERS, 2002, 27 (22) :1995-1997
[6]  
Yamaguchi S., Patent No. [US5513201A, 5513201]