Band alignment at β-In2S3/TCO interface

被引:31
作者
Bernède, JC [1 ]
Barreau, N [1 ]
Marsillac, S [1 ]
Assmann, L [1 ]
机构
[1] Univ Nantes, LPSE, FSTN, F-44322 Nantes 3, France
关键词
thin films; indium sulphide; XPS; heterostructure; photovoltaic;
D O I
10.1016/S0169-4332(02)00551-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The band alignment at the interface of the heterostructure beta-In2S3/SnO2 has been studied by X-ray photoelectron spectroscopy (XPS). The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve the beta-In2S3/SnO2 ohmic contact. The semi-direct XPS technique used to measure the band offsets allows us to estimate the conduction band discontinuity, DeltaE(c), between beta-In2S3 and SnO2 to -0.45 eV. The band alignment of the beta-In2S3/SnO2 heterostructure being known, we could estimate the Cu(In, Ga)Se-2/beta-In2S3 band alignment using the work function of SnO2 and the electron affinity of Cu(In, Ga)Se, reported in the literature. The conduction band discontinuity at the interface Cu(In, Ga)Se-2/beta-In2S3 has been estimated about 0 eV, which is an interesting result for photovoltaic applications. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:222 / 228
页数:7
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