High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

被引:7
作者
Thomasson, DB
Jackson, TN
机构
[1] Department of Electrical Engineering, Penn State University, University Park
关键词
D O I
10.1109/55.605452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We show that hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) with active layer thickness of 13 nm perform better for display applications than devices with thicker 50-nm active layers, A direct comparison of a-Si:H TFT's fabricated using an i-stopper TFT structure shows that ultrathin active layers significantly improve the device characteristics. For a 5-mu m channel length TFT, the linear region (V-DS = 0.1 V) and saturation region mobilities increase from 0.4 cm(2)/V.s and 0.7 cm(2)/V.s for a 50-nm thick active layer a-Si:H device to 0.7 cm(2)/V.s and 1.2 cm(2)/V.s for a 13-nm thick active layer a-Si:H layer device fabricated with otherwise identical geometry and processing.
引用
收藏
页码:397 / 399
页数:3
相关论文
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