SIMULATIONS OF SHORT-CHANNEL AND OVERLAP EFFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

[1] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 997 - 1020

[2] Hack M., 1988, MATER RES SOC S P, V118, P207

[3] MOTT NF, 1979, ELECTRONIC PROCESSES, V10

[4] CHARACTERISTICS OF AMORPHOUS-SILICON STAGGERED-ELECTRODE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 171 - 173

[5] AN ANALYTIC MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4562 - 4566

[6] SHAW JG, 1983, THESIS U MANITOBA

[7] SHAW JG, 1988, MATER RES SOC S P, V118, P225

[8] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3831 - 3842

[9] Thomson M. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P192

[1] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 997 - 1020

[2] Hack M., 1988, MATER RES SOC S P, V118, P207

[3] MOTT NF, 1979, ELECTRONIC PROCESSES, V10

[4] CHARACTERISTICS OF AMORPHOUS-SILICON STAGGERED-ELECTRODE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 171 - 173

[5] AN ANALYTIC MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4562 - 4566

[6] SHAW JG, 1983, THESIS U MANITOBA

[7] SHAW JG, 1988, MATER RES SOC S P, V118, P225

[8] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3831 - 3842

[9] Thomson M. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P192