Metal-induced crystallization of a-Si thin films by nonvacuum treatments

Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surface treatments with metal-containing solutions. Two different treatment procedures were demonstrated. With these treatments, one based on a Pd solution and the other on a Ni solution, the SPC time at 600 degrees C was reduced from 18 h to 10 min or less. This approach renders the usual vacuum deposition step used in metal-induced crystallization unnecessary. We find that the ultraviolet reflectance and Raman shift signals for the crystallized films are independent of whether the SPC-enhancing metal is applied by vacuum or solution. These characterization results do differ, however, with the metal applied.