LOW-TEMPERATURE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON INDUCED BY NICKEL SILICIDE FORMATION

被引：83

作者：

KAWAZU, Y

KUDO, H

ONARI, S

ARAI, T

机构：

[1] Institute of Applied Physics, University of Tsukuba, Tsukuba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 12期

关键词：

HETEROGENEOUS NUCLEATION; LOW-TEMPERATURE CRYSTALLIZATION; HYDROGENATED AMORPHOUS SILICON; SILICIDATION PROCESS; INSITU RESISTANCE MEASUREMENT; INTERFACIAL REACTION; NISI2; PHASE;

D O I：

10.1143/JJAP.29.2698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the silicidation process of the Ni/a-Si:H system on a fused silica substrate mainly by in situ electric resistance measurement. A rise of the resistance is observed in the temperature range of 480-510-degrees C of the resistance curve at a heating rate of 2 K/min. The results of the RBS measurements and the XRD measurements show that the rise of the resistance originates from the diffusion of Ni from the NiSi2 layer to a-Si:H film is high than 700-degrees-C, the present crystallization occurs at a much lower temperature. It is suggested that this low-temperature crystallization is induced by heterogenous nucleation, where the NiSi2 becomes the nucleus for Si crystalization.

引用

页码：2698 / 2704

页数：7

共 16 条

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