KINETICS OF SILICIDES ON SI(100) AND EVAPORATED SILICON SUBSTRATES

被引：54

作者：

LIEN, CD ^{[1
]}

NICOLET, MA ^{[1
]}

LAU, SS ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

THIN SOLID FILMS | 1986年 / 143卷 / 01期

关键词：

The authors thank B. X. Liu and Dr. M. Van Rossum for providing X-ray diffraction spectra and R. Fernandez for assisting in the sample preparation. Financial support by Varian Associates Research Center is gratefully acknowledged as well;

D O I：

10.1016/0040-6090(86)90147-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：63 / 72

页数：10

共 24 条

[1] BAGLIN J, 1980, P S THIN FILM INTERF, V80, P341
[2] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
CATELLANI, C
PRUDENZIATI, M
WADLIN, WH
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45
[3] CHEUNG N, 1980, P S THIN FILM INTERF, V80, P494
[4] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES
COE, DJ
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
[5] GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES
CRIDER, CA
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 417 - 419
[6] FORMATION OF THIN-FILMS OF NISI - METASTABLE STRUCTURE, DIFFUSION MECHANISMS IN INTERMETALLIC COMPOUNDS
DHEURLE, F
PETERSSON, CS
BAGLIN, JEE
LAPLACA, SJ
WONG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4208 - 4218
[7] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[8] TRANSITION-TEMPERATURES AND HEATS OF CRYSTALLIZATION OF AMORPHOUS GE,SI, AND GE1-XSIX ALLOYS DETERMINED BY SCANNING CALORIMETRY
FAN, JCC
ANDERSON, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4003 - 4006
[9] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI
HUNG, LS
GYULAI, J
MAYER, JW
LAU, SS
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5076 - 5080
[10] THIN PALLADIUM SILICIDE CONTACTS TO SILICON
KRITZINGER, S
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 305 - 310

← 1 2 3 →