SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS

被引：30

作者：

HUNG, LS ^{[1
]}

KENNEDY, EF ^{[1
]}

PALMSTROM, CJ ^{[1
]}

OLOWOLAFE, JO ^{[1
]}

MAYER, JW ^{[1
]}

RHODES, H ^{[1
]}

机构：

[1] EASTMAN KODAK CO, RES LABS, ROCHESTER, NY 14650 USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：236 / 238

页数：3

共 11 条

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[3]

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[4]

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[7] SEMITRANSPARENT SILICIDE ELECTRODES UTILIZING INTERACTION BETWEEN HYDROGENATED AMORPHOUS-SILICON AND METALS [J].

SEKI, K ;

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[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

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[9] STRUCTURAL AND ELECTRICAL-PROPERTIES OF NOBLE METAL-HYDROGENATED AMORPHOUS-SILICON INTERFACES [J].

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[10]

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