INTERFACIAL REACTION OF NICKEL HYDROGENATED AMORPHOUS-SILICON SYSTEM AT LOW-TEMPERATURE STUDIED BY FLUORESCENCE EXAFS

被引：5

作者：

KAWADZU, Y ^{[1
]}

IIOKA, M ^{[1
]}

FUJII, A ^{[1
]}

OYANAGI, H ^{[1
]}

ARAI, T ^{[1
]}

机构：

[1] UNIV TSUKUBA,ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90074-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nickel/hydrogenated amorphous silicon (a-Si:H) interfaces have been studied by fluorescence-detected X-ray absorption spectroscopy using synchrotron radiation. The layer formed at the Ni/a-Si:H interface during a room temperature deposition of Ni was characterized by Ni which constituted a part of the a-Si network. The structure began to change by annealing at 150°C and became close to that of Ni2Si with 230°C annealing. It is interpreted that the evolution of the structure in the direction of being Ni-rich follows the kinetic preference in the system, i.e. Ni has a higher mobility than Si. Crystalline NiSi2 was formed by annealing at 330°C in this system. This temperature was lower by about 420°C than that in a Ni/crystalline silicon system. © 1989.

引用

页码：296 / 300

页数：5

共 23 条

[1] A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION
BENE, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1826 - 1833
[2] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE
COMIN, F
ROWE, JE
CITRIN, PH
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405
[3] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE
GRUNTHANER, PJ
GRUNTHANER, FJ
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 924 - 929
[4] SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS
HUNG, LS
KENNEDY, EF
PALMSTROM, CJ
OLOWOLAFE, JO
MAYER, JW
RHODES, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 236 - 238
[5] FLUORESCENCE DETECTION OF EXAFS - SENSITIVITY ENHANCEMENT FOR DILUTE SPECIES AND THIN-FILMS
JAKLEVIC, J
KIRBY, JA
KLEIN, MP
ROBERTSON, AS
BROWN, GS
EISENBERGER, P
[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (09) : 679 - 682
[6] LOW-TEMPERATURE FORMATION OF NISI2 FROM EVAPORATED SILICON
LIEN, CD
NICOLET, MA
LAU, SS
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : 123 - 128
[7] KINETICS OF DECOMPOSITION OF AMORPHOUS HYDROGENATED SILICON FILMS
MCMILLAN, JA
PETERSON, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5238 - 5241
[8] MURARKA SP, 1983, SILICIDES VLSI APPLI
[9] Nemanich R. J., 1984, MATER RES SOC S P, V25, P9
[10] INTERFACE KINETICS AT METAL CONTACTS ON A-SI-H
NEMANICH, RJ
THOMPSON, MJ
JACKSON, WB
TSAI, CC
STAFFORD, BL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 513 - 516

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