Hybrid molecule-on-silicon nanoelectronics: Electrochemical processes for grafting and printing of monolayers

被引:44
作者
Aswal, D. K. [1 ,2 ]
Koiry, S. P. [2 ]
Jousselme, B. [1 ]
Gupta, S. K. [2 ]
Palacin, S. [1 ]
Yakhmi, J. V. [2 ]
机构
[1] SPCSI, IRAMIS, CEA, F-91191 Gif Sur Yvette, France
[2] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Mumbai 400085, Maharashtra, India
关键词
Electrografting; Monolayers; Hybrid nanoelectronics; Electrochemical printing; SELF-ASSEMBLED MONOLAYERS; DIP-PEN NANOLITHOGRAPHY; NEGATIVE DIFFERENTIAL RESISTANCE; X-RAY PHOTOELECTRON; POROUS SILICON; ALKYL MONOLAYERS; CONSTRUCTIVE NANOLITHOGRAPHY; ELECTRON-TRANSFER; DIAZONIUM SALTS; COVALENT MODIFICATION;
D O I
10.1016/j.physe.2008.11.001
中图分类号
TB3 [工程材料学];
学科分类号
082905 [生物质能源与材料];
摘要
The hybrid nanoelectronics, i.e., organic molecules deposited on Si exhibiting electronic functionalities is expected to extend the scaling limits of Si microelectronics down to few nanometers. In this review. first we make an overview of the organic molecules exhibiting various functionalities, such as, dielectric, diode, memory and transistor. We then review the literature on electrochemical grafting of organic molecules to Si, which have been carried Out using terminal vinyl (C=C), ethynyl (C=C), halide (Cl, Br, 1), tetraalkylammonium salt, diazonium salt and silane as reactant. It has been demonstrated that electrochemistry not only allows grafting of molecules on Si but also provides very useful information on the characteristics of the grafted layers. The electronic functionalities of various electrografted molecules are discussed. An additional advantage of the electrochemical process is that monolayer patterns with spatial resolution in a wide range, i.e. from nanometer to millimeter, can be easily prepared. The recent advances made in the spatial patterning of rnonolayers using electrochemical lithography are briefly reviewed. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:325 / 344
页数:20
相关论文
共 181 条
[1]
Covalent modification of iron surfaces by electrochemical reduction of aryldiazonium salts [J].
Adenier, A ;
Bernard, MC ;
Chehimi, MM ;
Cabet-Deliry, E ;
Desbat, B ;
Fagebaume, O ;
Pinson, J ;
Podvorica, F .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (19) :4541-4549
[2]
Covalent modification of carbon surfaces by aryl radicals generated from the electrochemical reduction of diazonium salts [J].
Allongue, P ;
Delamar, M ;
Desbat, B ;
Fagebaume, O ;
Hitmi, R ;
Pinson, J ;
Saveant, JM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1997, 119 (01) :201-207
[3]
Organic monolayers on Si(111) by electrochemical method [J].
Allongue, P ;
de Villeneuve, CH ;
Pinson, J ;
Ozanam, F ;
Chazalviel, JN ;
Wallart, X .
ELECTROCHIMICA ACTA, 1998, 43 (19-20) :2791-2798
[4]
Phenyl layers on H-Si(111) by electrochemical reduction of diazonium salts:: monolayer versus multilayer formation [J].
Allongue, P ;
de Villeneuve, CH ;
Cherouvrier, G ;
Cortès, R ;
Bernard, MC .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2003, 550 :161-174
[5]
Mono- and multilayer formation by diazonium reduction on carbon surfaces monitored with atomic force microscopy "scratching" [J].
Anariba, F ;
DuVall, SH ;
McCreery, RL .
ANALYTICAL CHEMISTRY, 2003, 75 (15) :3837-3844
[6]
[Anonymous], 2002, SEMICONDUCTOR DEVICE
[7]
Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning [J].
Arima, K ;
Endo, K ;
Kataoka, T ;
Oshikane, Y ;
Inoue, H ;
Mori, Y .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :463-465
[8]
Single-molecule electrical studies on a 7 nm long molecular wire [J].
Ashwell, Geoffrey J. ;
Urasinska, Barbara ;
Wang, Changsheng ;
Bryce, Martin R. ;
Grace, Iain ;
Lambert, Colin J. .
CHEMICAL COMMUNICATIONS, 2006, (45) :4706-4708
[9]
RECTIFYING CHARACTERISTICS OF MG/(C16H33-Q3CNQ LB FILM)/PT STRUCTURES [J].
ASHWELL, GJ ;
SAMBLES, JR ;
MARTIN, AS ;
PARKER, WG ;
SZABLEWSKI, M .
JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1990, (19) :1374-1376
[10]
Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions [J].
Aswal, D. K. ;
Petit, C. ;
Salace, G. ;
Guerin, A. ;
Lenfant, S. ;
Yakhmi, J. V. ;
Vuillaume, D. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (06) :1464-1469