Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions

被引：26

作者：

Jacobs, T ^{[1
]}

Brennan, K ^{[1
]}

Carpio, R ^{[1
]}

Mosig, K ^{[1
]}

Lin, JC ^{[1
]}

Cox, H ^{[1
]}

Mlynko, W ^{[1
]}

Fourcher, J ^{[1
]}

Bennett, J ^{[1
]}

Wolf, J ^{[1
]}

Augur, R ^{[1
]}

Gillespie, P ^{[1
]}

机构：

[1] Int Sematech, Austin, TX 78741 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The need for new low-k materials for interconnect dielectrics to meet the requirements stated in the International Technology Roadmap for Semiconductors (1) offers many new challenges to the etch and cleans processes. One significant challenge is the absorbance of process chemicals in open porous low-k films and incomplete removal of these contaminants. Porous low-k voiding is an integration issue recently addressed at International Sematech. This work proposes a mechanism of porous low-k voiding and an analytical technique to detect contamination in porous low-k films at sub 1% levels. Additionally, possible solutions to prevent low-k voiding are presented.

引用

页码：236 / 238

页数：3