Surface reactivity of CF2 radicals measured using laser-induced fluorescence and C2F6 plasma molecular beams

被引：33

作者：

Mackie, NM ^{[1
]}

Venturo, VA ^{[1
]}

Fisher, ER ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT CHEM,FT COLLINS,CO 80523

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 1997年 / 101卷 / 46期

关键词：

D O I：

10.1021/jp972434v

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface reactivity of CF2 radicals during plasma processing of a 300 K Si substrate using the imaging of radicals interacting with surfaces (IRIS) technique is reported. The molecular beam sources are 100% C2F6 and 50:50 C2F6/H-2 plasmas. Under IRIS conditions, there is no net film deposition in the former system, while the latter deposits a fluorocarbon polymer film. Simulation of cross-sectional data shows a CF2 surface reactivity of -0.44 +/- 0.03 with 100%C2F6 and of 0.16 +/- 0.02 using 50:50 C2F6/H-2. A negative reactivity indicates CF2 molecules are generated through plasma processing of the substrate. Possible CF2 surface generation mechanisms are discussed.

引用

页码：9425 / 9428

页数：4

共 43 条

[1] Surface reactivity measurements for OH radicals during deposition of SiO2 from tetraethoxysilane/O-2 plasmas [J].