A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor

被引：141

作者：

Aumaille, K ^{[1
]}

Vallée, C ^{[1
]}

Granier, A ^{[1
]}

Goullet, A ^{[1
]}

Gaboriau, F ^{[1
]}

Turban, G ^{[1
]}

机构：

[1] Univ Nantes, Lab Plasmas & Couches Minces, Inst Mat Jean Rouxel Nantes, CNRS, F-44322 Nantes 3, France

来源：

THIN SOLID FILMS | 2000年 / 359卷 / 02期

关键词：

organosilicon films; plasma processing and deposition; silicon oxide;

D O I：

10.1016/S0040-6090(99)00883-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin SiOxCvHz films have been prepared by plasma enhanced chemical vapor deposition (PECVD) on silicon substrates at low pressure (2 mTorr) and 300 W rf power, using tetraethoxysilane (TEOS) or hexamethyldisiloxane (HMDSO) as a monomer and oxygen as a reactive gas. The plasma composition, the structure and properties of the deposited films are studied as a function of the organosilicon fraction (X-org). Optical emission spectroscopy is carried out in order to identify the species in the plasma. The layers are characterized by in situ spectroscopic ellipsometry and by several ex situ diagnostics including infra-red spectroscopy, X-ray photoelectron spectroscopy, gravimetry and chemical etching. At low values of X-org, the structure and properties of the films and optical emission spectra are very similar whatever the organosilicon precursor. At high values of X-org, the structure and properties of the deposited films and emitting species significantly depend on the organosilicon precursor. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：188 / 196

页数：9

共 24 条

[1] An X-ray photoelectron spectroscopic investigation into the chemical structure of deposits formed from hexamethyldisiloxane/oxygen plasmas [J].