HYDROGENATING SILICON DIOXIDE IN AN ELECTRON-CYCLOTRON PLASMA

被引：10

作者：

DELFINO, M

TSAI, W

REYNOLDS, G

DAY, ME

机构：

[1] Edward L. Ginzton Research Center, Varian Associates, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogenating effect of a low-temperature, electron cyclotron resonance excited H-2 plasma on the surface chemistry of thermal SiO2 films is analyzed in situ by x-ray photoemission spectroscopy and static secondary ion mass spectrometry. Hydrogenation with this nominal 10 eV proton flux results in Si-(O4), H-Si-(O3), (H-2)-Si-(O2), (H-2)-Si-O, and H-Si-(Si3) bonding states to the complete exclusion of Si-OH bond formation. A simple thermodynamic argument accounts for the exclusivity of Si-H bonds terminating the outermost (O3)-Si-O-Si-(O3) network of a thick SiOx<2 film, thereby transforming what is normally a hydrophilic surface into one that is hydrophobic.

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收藏

页码：3426 / 3428

页数：3

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