Growth and characterization of the isotopically enriched 28Si bulk single crystal

被引：59

作者：

Takyu, K

Itoh, KM ^{[1
]}

Oka, K

Saito, N

Ozhogin, VI

机构：

[1] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238522, Japan

[2] Japan Sci & Technol Corp, PRESTO, Tokyo 1020074, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[4] Kurchatov Inst, Russian Res Ctr, Moscow 123182, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 12B期

关键词：

Si; bulk crystal; isotope; floating-zone growth; LSI substrate;

D O I：

10.1143/JJAP.38.L1493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful growth of an isotopically enriched Si-28 bulk single crystal of the size similar to 4 mm in diameter and similar to 50 mm in length. The isotopic enrichement of Si-28 (99.924 at%), Si-29 (0.073 at%), and Si-30 (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration similar to 5 x 10(17) cm(-3). The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

引用

页码：L1493 / L1495

页数：3

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