共 12 条
Tunable dielectric properties of lead barium zirconate niobate films
被引:23
作者:

Kuo, Ya-Ling
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

Wu, Jenn-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
机构:
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
关键词:
D O I:
10.1063/1.2357851
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The effect of substitution of niobium for zirconium on tunable behavior of lead barium zirconate (PBZ) films was investigated. Lead barium zirconate niobate films were grown on Pt/Ti/SiO2/Si substrates using chemical solution deposition method. The substitution of Nb for Zr enhances tunable properties of PBZ films. The dielectric tunabilities are excellent, all higher than 45% with a maximum=60%. The substitution of Nb for Zr raises values of figure of merit (FOM) of films. The maximum FOM takes place at 5 mol % Nb with a value of 90, which is about three times that of the corresponding PBZ film. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 12 条
[1]
Effect of Nb doping on the relaxor behaviour of (Pb0.75Ba0.25)(Zr0.70Ti0.30)O3 ceramics
[J].
Adamczyk, M
;
Ujma, Z
;
Szymczak, L
;
Gruszka, I
.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,
2006, 26 (03)
:331-336

Adamczyk, M
论文数: 0 引用数: 0
h-index: 0
机构:
Silesian Univ, Inst Phys, PL-40007 Katowice, Poland Silesian Univ, Inst Phys, PL-40007 Katowice, Poland

Ujma, Z
论文数: 0 引用数: 0
h-index: 0
机构:
Silesian Univ, Inst Phys, PL-40007 Katowice, Poland Silesian Univ, Inst Phys, PL-40007 Katowice, Poland

Szymczak, L
论文数: 0 引用数: 0
h-index: 0
机构:
Silesian Univ, Inst Phys, PL-40007 Katowice, Poland Silesian Univ, Inst Phys, PL-40007 Katowice, Poland

Gruszka, I
论文数: 0 引用数: 0
h-index: 0
机构:
Silesian Univ, Inst Phys, PL-40007 Katowice, Poland Silesian Univ, Inst Phys, PL-40007 Katowice, Poland
[2]
MICROWAVE MEASUREMENT OF THE DIELECTRIC-CONSTANT OF SR0.5BA0.5TIO3 FERROELECTRIC THIN-FILMS
[J].
CARROLL, KR
;
POND, JM
;
CHRISEY, DB
;
HORWITZ, JS
;
LEUCHTNER, RE
;
GRABOWSKI, KS
.
APPLIED PHYSICS LETTERS,
1993, 62 (15)
:1845-1847

CARROLL, KR
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington

POND, JM
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington

CHRISEY, DB
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington

HORWITZ, JS
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington

LEUCHTNER, RE
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington

GRABOWSKI, KS
论文数: 0 引用数: 0
h-index: 0
机构: Naval Research Laboratory, Washington
[3]
Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods
[J].
Cole, MW
;
Nothwang, WD
;
Hubbard, C
;
Ngo, E
;
Ervin, M
.
JOURNAL OF APPLIED PHYSICS,
2003, 93 (11)
:9218-9225

Cole, MW
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

Nothwang, WD
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

Hubbard, C
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

Ngo, E
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

Ervin, M
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
[4]
Effects of Nb doping on highly fatigue-resistant thin films of (Pb0.8Ba0.2)ZrO3 for ferroelectric memory application
[J].
Hung, CL
;
Wu, TB
.
JOURNAL OF CRYSTAL GROWTH,
2005, 274 (3-4)
:402-406

Hung, CL
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

Wu, TB
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
[5]
High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser deposition
[J].
Lu, SG
;
Zhu, XH
;
Mak, CL
;
Wong, KH
;
Chan, HLW
;
Choy, CL
.
APPLIED PHYSICS LETTERS,
2003, 82 (17)
:2877-2879

Lu, SG
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

Zhu, XH
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

Mak, CL
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

Wong, KH
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

Chan, HLW
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

Choy, CL
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[6]
Dielectric properties of niobium and lanthanum doped lead barium zirconate titanate relaxor ferroelectrics
[J].
Pan, MJ
;
Rayne, RJ
;
Bender, BA
.
JOURNAL OF ELECTROCERAMICS,
2005, 14 (02)
:139-148

Pan, MJ
论文数: 0 引用数: 0
h-index: 0
机构:
USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA

Rayne, RJ
论文数: 0 引用数: 0
h-index: 0
机构:
USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA

Bender, BA
论文数: 0 引用数: 0
h-index: 0
机构:
USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA USN, Res Lab, Nova Res Inc, Washington, DC 20375 USA
[7]
Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films
[J].
Park, BH
;
Peterson, EJ
;
Jia, QX
;
Lee, J
;
Zeng, X
;
Si, W
;
Xi, XX
.
APPLIED PHYSICS LETTERS,
2001, 78 (04)
:533-535

Park, BH
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Peterson, EJ
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Jia, QX
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Lee, J
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Zeng, X
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Si, W
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA

Xi, XX
论文数: 0 引用数: 0
h-index: 0
机构: Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[8]
Dielectric studies of phase transitions in (Pb1-xBax)ZrO3
[J].
Pokharel, BP
;
Pandey, D
.
JOURNAL OF APPLIED PHYSICS,
2000, 88 (09)
:5364-5373

Pokharel, BP
论文数: 0 引用数: 0
h-index: 0
机构:
Banaras Hindu Univ, Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India Banaras Hindu Univ, Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India

论文数: 引用数:
h-index:
机构:
[9]
Irreversibility of the antiferroelectric to ferroelectric phase transition in (Pb0.90Ba0.10)ZrO3 ceramics
[J].
Pokharel, BP
;
Pandey, D
.
JOURNAL OF APPLIED PHYSICS,
1999, 86 (06)
:3327-3332

Pokharel, BP
论文数: 0 引用数: 0
h-index: 0
机构:
Banaras Hindu Univ, Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India Banaras Hindu Univ, Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India

论文数: 引用数:
h-index:
机构:
[10]
X-RAY STUDY OF PHASE TRANSITIONS IN PBZRO3 CONTAINING BA OR SR
[J].
SHIRANE, G
;
HOSHINO, S
.
ACTA CRYSTALLOGRAPHICA,
1954, 7 (02)
:203-210

SHIRANE, G
论文数: 0 引用数: 0
h-index: 0

HOSHINO, S
论文数: 0 引用数: 0
h-index: 0