The nature and diffusion of intrinsic point defects in SiC

被引：26

作者：

Bockstedte, M ^{[1
]}

Heid, M ^{[1
]}

Mattausch, A ^{[1
]}

Pankratov, O ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Theor Festkorperphys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

defect complexes; interstitials; self-diffusion; vacancies;

D O I：

10.4028/www.scientific.net/MSF.389-393.471

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We apply an ab initio method to study the nature of intrinsic point defects in SiC and their diffusion. An identification of intrinsic defect centers via localised vibrational modes and the hyperfine interaction is pursued. Our results identify possible annealing mechanisms of the vacancies.

引用

页码：471 / 476

页数：6

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