Asymmetry gap in the electronic band structure of bilayer graphene

被引:1067
作者
McCann, Edward [1 ]
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 16期
关键词
D O I
10.1103/PhysRevB.74.161403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A tight-binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap Delta between the conduction and valence bands. In particular, a self-consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap Delta(n). We discuss the influence of a finite asymmetry gap Delta(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.
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页数:4
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