Stochastic modeling in lithography: use of dynamical scaling in photoresist development

被引:15
作者
Mack, Chris A. [1 ]
机构
[1] Lithoguru Com, Austin, TX 78703 USA
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2009年 / 8卷 / 03期
关键词
dynamical scaling; kinetic roughness; stochastic modeling; photoresist development; line-edge roughness (LER); line-width roughness (LWR); CORRELATED NOISE; GROWTH-MODELS; UNIVERSALITY; ROUGHNESS;
D O I
10.1117/1.3158612
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1 + 1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent alpha and the growth exponent beta were found to match the 1+ 1 KPZ values exactly. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3158612]
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页数:8
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