Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

被引：88

作者：

Hattori, T

Yoshida, T

Shiraishi, T

Takahashi, K

Nohira, H

Joumori, S

Nakajima, K

Suzuki, M

Kimura, K

Kashiwagi, I

Ohshima, C

Ohmi, S

Iwai, H

机构：

[1] Musashi Inst Technol, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 1588557, Japan

[2] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan

[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

[4] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268502, Japan

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

Rutherford back scattering; photoelectron spectroscopy; high-k dielectrics; depth profiling; electronic band structures;

D O I：

10.1016/j.mee.2004.01.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimental data for Gd2O3, as a typical example of rare earth oxide films, clearly indicate that combination of high resolution RBS and high resolution XPS studies is powerful for the determination of composition and chemical structures of high-k dielectric films. Conduction and valence band discontinuities at rare earth oxide/Si(I 0 0) interfaces were also determined by measuring the 0 Is photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：283 / 287

页数：5

共 10 条

[1] A NEW ESCA INSTRUMENT WITH IMPROVED SURFACE SENSITIVITY, FAST IMAGING PROPERTIES AND EXCELLENT ENERGY RESOLUTION [J].