Ka-band RF MEMS phase shifters

被引：89

作者：

Pillans, B ^{[1
]}

Eshelman, S ^{[1
]}

Malczewski, A ^{[1
]}

Ehmke, J ^{[1
]}

Goldsmith, C ^{[1
]}

机构：

[1] Raytheon Syst Co, Dallas, TX 75266 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 12期

关键词：

K alpha-band; MMIC; phase shifter; RF MEMS;

D O I：

10.1109/75.819418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the need for low-loss phase shifters increases, so does the interest in radio frequency (RF) MEMS as a solution to provide them. In this paper, progress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with better than 15-dB return loss. A similar 3-bit phase shifter produced an average insertion loss of 1.7 dB with better than 13 dB return loss. Both devices had a phase error of Less than 13 degrees in the fundamental states. To our knowledge, these devices represent the lowest loss Ka-band phase shifters reported to date.

引用

页码：520 / 522

页数：3