Impurity-Induced Spin-Orbit Coupling in Graphene

被引：340

作者：

Castro Neto, A. H. ^{[1
]}

Guinea, F. ^{[2
]}

机构：

[1] Boston Univ, Dept Phys, Boston, MA 02215 USA

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 02期

关键词：

TRANSPORT;

D O I：

10.1103/PhysRevLett.103.026804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the sp(3) distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in diamond and other zinc-blende semiconductors. The spin-flip scattering produced by the impurity leads to spin scattering lengths of the order found in recent experiments. Our results indicate that the spin-orbit coupling can be controlled via the impurity coverage.

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页数：4

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