Morphology and growth kinetics of organic thin films deposited by hot wall epitaxy

被引:26
作者
Andreev, AY [1 ]
Teichert, C
Hlawacek, G
Hoppe, H
Resel, R
Smilgies, DM
Sitter, H
Sariciftci, NS
机构
[1] Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Univ Min & Met Leoben, Dept Phys, A-8700 Leoben, Austria
[3] Univ Linz, LIOS, A-4040 Linz, Austria
[4] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria
[5] Cornell Univ, CHESS G Line, Ithaca, NY 14853 USA
关键词
organic epitaxy; crystalline thin films; atomic force microscopy; X-ray diffraction;
D O I
10.1016/j.orgel.2004.01.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work we have used atomic force microscopy and X-ray diffraction by synchrotron radiation to investigate the growth kinetics and morphology of para-sexiphenyl layers. The results of our investigations can be summarized as follows: (a) para-sexiphenyl grows on mica epitaxialy; (b) a rearrangement from randomly distributed small para-sexiphenyl islands with compact shape to elongated islands occurs during the growth if the critical island density is reached; (c) with further increase of the growth time the islands become elongated, quickly reaching a fixed asymptotic width while their height remains much smaller than their length and width. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:23 / 27
页数:5
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