Colossal magnetoresistance in Sm1-xSrxMnO3 films

被引：33

作者：

Kasai, M ^{[1
]}

Kuwahara, H

Tomioka, Y

Tokura, Y

机构：

[1] JOINT RES CTR ATOM TECHNOL, TSUKUBA, IBARAKI 305, JAPAN

[2] UNIV TOKYO, DEPT APPL PHYS, TOKYO 113, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.363759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetotransport properties were investigated for Sm1-xSrxMnO3 films that were prepared by the pulsed laser deposition technique. Application of a magnetic field causes a huge change in the resistivity for x=0.45, 0.50, and 0.55, in some cases exceeding five orders of magnitude. Measurement of the magnetization curve at low temperature which is removed after loading of a high magnetic field (5T) suggests the existence of the antiferromagnetic correlations. In accord with this, the magnetoresistance shows an irreversible behavior against the field sweep. The results imply that the colossal isothermal magnetoresistance in the thin films, of which the hole concentration is of a commensurate value of around, x= 1/2 has the same origin as the magnetic-field-induced first-order transition reported for the single crystals that is the magnetic-field-induced melting of the charge-ordered stale. (C) 1996 American Institute of Physics.

引用

页码：6894 / 6897

页数：4

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