Formation of atomically flat Si(001) surface with incorporated carbon

被引：7

作者：

Kim, W ^{[1
]}

Kim, H ^{[1
]}

Lee, G ^{[1
]}

You, SY ^{[1
]}

Hong, YK ^{[1
]}

Koo, JY ^{[1
]}

机构：

[1] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

来源：

SURFACE SCIENCE | 2002年 / 516卷 / 03期

关键词：

scanning tunneling microscopy; surface relaxation and reconstruction; alkynes; carbon; silicon;

D O I：

10.1016/S0039-6028(02)02056-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the formation of atomically flat Si(0 0 1) surfaces with C incorporation using thermal dissociation Of C2H2 molecules. The resulting surface phases are investigated by scanning tunneling microscopy and found to contain C atoms as much as 0.2 monolayer (ML) without roughening. At low C concentrations, C-induced vacancy line defects are generated on the surface, forming a 2 x n superstructure. As the C concentration increases, a new phase with a c(4 x 4) structure starts to appear and coexists with the 2 x n phase, eventually covering the whole surface at about 0.2 ML. The C atoms in the 2 x n superstructure are thought to occupy substitutional sites in a subsurface layer and constitute a delta-like distribution. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：L553 / L556

页数：4

共 31 条

[1] Near-band-edge photoluminescence from pseudomorphic Si1-gamma C gamma/Si quantum well structures [J].