Effect of Se/(Ga plus In) ratio on MBE grown Cu(In,Ga)Se2 thin film solar cell

被引：36

作者：

Islam, M. M. ^{[1
]}

Sakurai, T. ^{[1
]}

Ishizuka, S. ^{[2
]}

Yamada, A. ^{[2
]}

Shibata, H. ^{[2
]}

Sakurai, K. ^{[2
]}

Matsubara, K. ^{[2
]}

Niki, S. ^{[2
]}

Akimoto, K. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Characterization; Molecular beam epitaxy; Chalcopyrite Cu(InGa)Se-2; Solar cells; CUINSE2; MICROSTRUCTURE;

D O I：

10.1016/j.jcrysgro.2008.12.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of Se/(Ga+In) ratio, expressed as Se/III, on the electrical, optical and structural properties of Cu(In,Ga)Se-2, abbreviated as CIGS, thin film and on the solar cell performance was studied. CIGS films with various Se/III ratios were grown by the molecular beam epitaxy (MBE) process. With decreasing Se/III ratio, the resistivity of CIGS film was found to be increased and majority carrier hole concentration was decreased. This is probably due to the formation of Se-vacancy and/or vacancy complex. Again, the band-gap energy of CIGS film increased and the Cu content in the bulk of the film decreased with decreasing Se/III ratio despite the Ga/III ratio in the film remained almost unchanged. These results may suggest the formation of anti-site defects such as In-Cu in CIGS. Solar cell performance degraded with decreasing Se/III ratio in CIGS absorber layer and the cause of the degradation was discussed. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2212 / 2214

页数：3

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