Analysis of phase distribution in phase-change nonvolatile memories

被引：106

作者：

Ielmini, D ^{[1
]}

Lacaita, AL

Pirovano, A

Pellizzer, F

Bez, R

机构：

[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

[2] CNR, Ist Foton & Nanotechnol, I-20133 Milan, Italy

[3] STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期

关键词：

amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase-change memory (PCM);

D O I：

10.1109/LED.2004.831219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the program pulse in the chalcogenide layer.

引用

页码：507 / 509

页数：3

共 15 条

[1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].

ADLER, D ;

SHUR, MS ;

SILVER, M ;

OVSHINSKY, SR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309

[2]

[Anonymous], S VLSI TECHN

[3] Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements [J].

Bernacki, S ;

Hunt, K ;

Tyson, S ;

Hudgens, S ;

Pashmakov, B ;

Czubatyj, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2528-2533

[4] EVIDENCE FOR CRITICAL-FIELD SWITCHING IN AMORPHOUS-SEMICONDUCTOR MATERIALS [J].

BUCKLEY, WD ;

HOLMBERG, SH .

PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1429-1432

[5]

HORII H, 2003, S VLSI TECHN

[6]

Hwang Y. N., 2003, S VLSI TECH SYST APP, P29

[7]

Hwang YN, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P893

[8]

Kim YT, 2003, 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, P211

[9]

Lai S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P255

[10]

LAI S, 2001, IEDM, P803

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