p-type doping efficiency of MoO3 in organic hole transport materials

被引：132

作者：

Hamwi, S. ^{[1
]}

Meyer, J. ^{[1
]}

Winkler, T. ^{[1
]}

Riedl, T. ^{[1
]}

Kowalsky, W. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

关键词：

doping; hole density; molybdenum compounds; segregation; thin films; work function; BULK;

D O I：

10.1063/1.3159824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the p-type doping efficiency of molybdenum trioxide (MoO3) in the ambipolar organic charge transport material 4,4(')-Bis(carbazol-9-yl)-biphenyl (CBP). Kelvin probe analysis is used to study the work function with increasing thickness of doped CBP layers with varied MoO3 concentration deposited on indium tin oxide (ITO). Based on the model of a one-sided abrupt (n(+)p) junction between ITO and the MoO3 doped CBP layer, the density of free holes has been determined. A surprisingly low p-type doping efficiency of less than 2% has been derived. Segregation and clustering of the MoO3 dopant could explain these results.

引用

页数：3

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