Low voltage efficient simple p-i-n type electrophosphorescent green organic light-emitting devices

被引：29

作者：

Kim, Sun Young ^{[1
]}

Jeon, Woo Sik ^{[1
]}

Park, Tae Jin ^{[1
]}

Pode, Ramchandra ^{[2
]}

Jang, Jin ^{[1
]}

Kwon, Jang Hyuk ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Dongdaemoon Ku, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

electroluminescent devices; organic compounds; organic light emitting diodes; phosphorescence; p-i-n photodiodes; ELECTROLUMINESCENT DEVICES; INJECTING LAYER; DIODES;

D O I：

10.1063/1.3114378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present simple p-i-n structures with double-emitting and mixed-emitting layers for highly efficient phosphorescent green devices. Using a wide band-gap hole transporting material of 4,4(')4(')-tris(N-carbazolyl)-triphenylamine and a wide band-gap electron transporting material of bis[2-(2-hydroxyphenyl)-pyridine]beryllium, the bilayered p-i-n structure with no heterointerface barriers has been realized. A very low onset voltage value of 2.4 V corresponding to the energy of 2.4 eV of green electroluminescence, which is close to the photon energy of dopant emitting molecules (2.3-2.4 eV), is achieved in this simple p-i-n device configuration. Maximum current- and power-efficiency values of 53.3 cd/A and 61.4 lm/W and low rolloff of current efficiency (6%) are demonstrated in the simple p-i-n green phosphorescent devices, promising for the practical and economical high brightness applications.

引用

页数：3

共 18 条

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