X-ray scattering study of porous silicon layers

被引：7

作者：

Chamard, V

Dolino, G

Stettner, J

机构：

[1] Univ Grenoble 1, Spectrometrie Phys Lab, UMR 5588 CNRS, F-38402 St Martin Dheres, France

[2] Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 283卷 / 1-3期

关键词：

X-ray reflectivity; diffuse scattering; surface roughness; porous silicon;

D O I：

10.1016/S0921-4526(99)01906-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray reflectivity is used to study the mesoscopic structure of porous silicon layers. For a porous silicon thin film, we present measurements of the specular and the diffuse scattering together with their best fits. The analysis of the scattered intensity within the distorted-wave Born approximation based on a model of rough fractal interface yields new structural information. Furthermore, an overview of experimental results obtained for several thick porous silicon samples (either as-formed or etched) is presented. The diffuse scattering exhibits characteristic effects due to large surface roughness and the porous structure. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：135 / 138

页数：4