Multiparameter grating metrology using optical scatterometry

Scatterometry, the analysis of light diffraction from periodic structures,is shown to be a versatile metrology technique applicable to a number of processes involved in the production of microelectronic devices. We have demonstrated that the scatterometer measurement technique is robust to changes in the thickness of underlying films. Indeed, there is sufficient information in one signature to determine four process parameters at once, namely the linewidth and thickness of the photoresist grating, and the thicknesses of two underlying film layers. Results from determining these dimensions on a 25 wafer study show excellent agreement between the scatterometry measurements and measurements made with other metrology instruments [top-down and cross-section scanning electron microscopy (SEM) and ellipsometer]. In particular, measurements of nominal 0.35 mu m lines agree well with cross-section SEM measurements; the average bias is -1.7 nm. Similarly, for nominal 0.25 mu m lines, the average bias is -7.3 nm. In addition, the repeatability (1 sigma) of this technique is shown to be subnanometer for all of the parameters measured (linewidth, resist height, antireflection coating thickness, and poly-Si thickness). (C) 1997 American Vacuum Society.