Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

被引:65
作者
Sankapal, BR [1 ]
Mane, RS [1 ]
Lokhande, CD [1 ]
机构
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
关键词
Bi2Se3 thin films; SILAR method; annealing effect;
D O I
10.1016/S0254-0584(99)00226-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A successive ionic layer adsorption and reaction (SU;AR) method which is a simple and versatile for yielding good quality Bi2Se3 films of thickness upto similar to 1.2 mu m under a choice of deposition conditions is presented. The films were deposited onto glass and single crystalline wafer of Si (1 1 1). The structural, optical and electrical properties were studied. The thin films were smooth and homogeneous. The films annealed at 473 K in air for 1 h, did not show significant change in crystallinity and optical bandgap. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:230 / 234
页数:5
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