Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

被引：27

作者：

Schubert, J ^{[1
]}

Schöning, MJ

Schmidt, C

Siegert, M

Mesters, S

Zander, W

Kordos, P

Lüth, H

Legin, A

Mourzina, YG

Seleznev, B

Vlasov, YG

机构：

[1] Res Ctr Julich GMBH, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

[2] Univ Appl Sci Aachen, D-52428 Julich, Germany

[3] St Petersburg State Univ, Dept Chem, St Petersburg 199034, Russia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051534

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multicomponent target material to a given substrate. This advantage of the PLD determined the choice to prepare chalcogenide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Te targets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

引用

页码：S803 / S805

页数：3

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