Midinfrared emission from InGaN/GaN-based light-emitting diodes

被引：11

作者：

Hofstetter, D ^{[1
]}

Faist, J

Bour, DP

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In composition in the active region had the shortest midinfrared emission wavelength and vice versa. With increasing In content, a significantly decreasing amount of TM polarization was observed in the midinfrared emission spectrum. This result suggests that the density of states in the higher-In content devices corresponds to a zero-dimensional electronic system rather than a two-dimensional electron gas. In contrast to this, the violet light-emitting diode exhibited a higher degree of TM polarization; similar to a red InGaP-based quantum-well device. (C) 2000 American Institute of Physics. [S0003-6951(00)01912-4].

引用

页码：1495 / 1497

页数：3

共 19 条

[1]

BOUR DP, 1998, IEEE J QUANTUM ELECT, V34, P498

[2] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[3] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[4] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature [J].

Faist, J ;

Capasso, F ;

Sirtori, C ;

Sivco, DL ;

Baillargeon, JN ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3680-3682

[5] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[6]

Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503

[7] Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth [J].

Hofstetter, D ;

Faist, J ;

Beck, M ;

Müller, A ;

Oesterle, U .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :665-667

[8] Phase separation in InGaN/GaN multiple quantum wells [J].

McCluskey, MD ;

Romano, LT ;

Krusor, BS ;

Bour, DP ;

Johnson, NM ;

Brennan, S .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1730-1732

[9] EMERGING GALLIUM NITRIDE BASED DEVICES [J].

MOHAMMAD, SN ;

SALVADOR, AA ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1995, 83 (10) :1306-1355

[10] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

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