Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

被引：498

作者：

Dimroth, Frank ^{[1
]}

Grave, Matthias ^{[1
]}

Beutel, Paul ^{[1
]}

Fiedeler, Ulrich ^{[1
]}

Karcher, Christian ^{[1
]}

Tibbits, Thomas N. D. ^{[1
]}

Oliva, Eduard ^{[1
]}

Siefer, Gerald ^{[1
]}

Schachtner, Michael ^{[1
]}

Wekkeli, Alexander ^{[1
]}

Bett, Andreas W. ^{[1
]}

Krause, Rainer ^{[2
]}

Piccin, Matteo ^{[2
]}

Blanc, Nicolas ^{[2
]}

Drazek, Charlotte ^{[2
]}

Guiot, Eric ^{[2
]}

Ghyselen, Bruno ^{[2
]}

Salvetat, Thierry ^{[3
]}

Tauzin, Aurelie ^{[3
]}

Signamarcheix, Thomas ^{[3
]}

Dobrich, Anja ^{[4
]}

Hannappel, Thomas ^{[4
]}

Schwarzburg, Klaus ^{[4
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

[2] SOITEC SA, F-38190 Bernin, France

[3] CEA LETI MINATEC Campus, F-38054 Grenoble, France

[4] Helmholtz Zentrum Berlin HZB, D-14109 Berlin, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2014年 / 22卷 / 03期

关键词：

Concentrator cells; III-V semiconductors; Multi-junction solar cells; Wafer bonding;

D O I：

10.1002/pip.2475

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd.

引用

页码：277 / 282

页数：6

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