1.6 A GaN Schottky rectifiers on bulk GaN substrates

被引：13

作者：

Johnson, JW

Lou, B

Ren, F

Palmer, D

Pearton, SJ

Park, SS

Park, YJ

Chyi, JI

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] MCNC, Res Triangle Pk, NC 27709 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Samsung Adv Inst Technol, Suwon 440600, South Korea

[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 06期

基金：

美国国家科学基金会;

关键词：

GaN; HVPE; Schottky; rectifier; thermal package; bulk substrate;

D O I：

10.1016/S0038-1101(01)00339-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area bulk GaN rectifiers with implanted p(+) guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mOmegacm(2). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：911 / 913

页数：3

共 15 条

[1] High voltage GaN Schottky rectifiers [J].

Dang, GT ;

Zhang, AP ;

Ren, F ;

Cao, XA ;

Pearton, SJ ;

Cho, H ;

Han, J ;

Chyi, JI ;

Lee, CM ;

Chuo, CC ;

Chu, SNG ;

Wilson, RG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) :692-696

[2]

FLORESCU DI, 1999, MAT RES SOC S P, V595

[3]

Heydt GT, 1998, MATER RES SOC SYMP P, V483, P3

[4] Power quality indices for aperiodic voltages and currents [J].

Jaramillo, SH ;

Heydt, GT ;

O'Neill-Carrillo, E .

IEEE TRANSACTIONS ON POWER DELIVERY, 2000, 15 (02) :784-790

[5] Schottky rectifiers fabricated on free-standing GaN substrates [J].

Johnson, JW ;

LaRoch, JR ;

Ren, F ;

Gila, BP ;

Overberg, ME ;

Abernathy, CR ;

Chyi, JI ;

Chou, CC ;

Nee, TE ;

Lee, CM ;

Lee, KP ;

Park, SS ;

Park, YJ ;

Pearton, SJ .

SOLID-STATE ELECTRONICS, 2001, 45 (03) :405-410

[6]

Pearton SJ, 2000, ADV MATER, V12, P1571, DOI 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO

[7]

2-T

[8] GaN: Processing, defects, and devices [J].

Pearton, SJ ;

Zolper, JC ;

Shul, RJ ;

Ren, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :1-78

[9] Fabrication and performance of GaN electronic devices [J].

Pearton, SJ ;

Ren, F ;

Zhang, AP ;

Lee, KP .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 30 (3-6) :55-212

[10] Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy [J].

Yun, F ;

Reshchikov, MA ;

Jones, K ;

Visconti, P ;

Morkoç, H ;

Park, SS ;

Lee, KY .

SOLID-STATE ELECTRONICS, 2000, 44 (12) :2225-2232

← 1 2 →