Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

被引：195

作者：

Goto, Hajime ^{[1
]}

Nosaki, Katsutoshi ^{[1
]}

Tomioka, Katsuhiro ^{[2
,3
]}

Hara, Shinjiro ^{[2
,3
]}

Hiruma, Kenji ^{[2
,3
]}

Motohisa, Junichi ^{[2
,3
]}

Fukui, Takashi ^{[2
,3
]}

机构：

[1] Honda Res & Dev Co Ltd, Fundamental Technol Res Ctr, Wako, Saitama 3510193, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[3] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

关键词：

SOLAR-CELLS; SEMICONDUCTOR NANOWIRES; SINGLE; ARRAYS; MOVPE;

D O I：

10.1143/APEX.2.035004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the formation of core-shell pn junction InP nanowires using a catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) method. A periodically aligned dense core-shell InP nanowire array was fabricated and used in photovoltaic device applications. The device exhibited open-circuit voltage (V-OC), short-circuit current (I-SC) and fill factor (FF) levels of 0.43 V, 13.72 mA/cm(2) and 0.57, respectively, which indicated a solar power conversion efficiency of 3.37% under AM1.5G illumination. This study demonstrates that high quality core-shell structure nanowire fabrication is possible by SA-MOVPE and that the nanowire arrays can be used in integrated nanowire photovoltaic devices. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.035004

引用

页数：3

共 22 条

[1] One-dimensional steeplechase for electrons realized [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2002, 2 (02) :87-89

[2] Single-nanowire electrically driven lasers [J].

Duan, XF ;

Huang, Y ;

Agarwal, R ;

Lieber, CM .

NATURE, 2003, 421 (6920) :241-245

[3] Silicon nanowire radial p-n junction solar cells [J].

Garnett, Erik C. ;

Yang, Peidong .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (29) :9224-+

[4] GROWTH AND OPTICAL-PROPERTIES OF NANOMETER-SCALE GAAS AND INAS WHISKERS [J].

HIRUMA, K ;

YAZAWA, M ;

KATSUYAMA, T ;

OGAWA, K ;

HARAGUCHI, K ;

KOGUCHI, M ;

KAKIBAYASHI, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :447-462

[5] Analysis of optical absorption in silicon nanowire Arrays for photovoltaic applications [J].

Hu, Lu ;

Chen, Gang .

NANO LETTERS, 2007, 7 (11) :3249-3252

[6] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals [J].

Inari, M ;

Takeda, J ;

Motohisa, J ;

Fukui, T .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :620-624

[7] Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells -: art. no. 114302 [J].

Kayes, BM ;

Atwater, HA ;

Lewis, NS .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)

[8] Photovoltaic measurements in single-nanowire silicon solar cells [J].

Kelzenberg, Michael D. ;

Turner-Evans, Daniel B. ;

Kayes, Brendan M. ;

Filler, Michael A. ;

Putnam, Morgan C. ;

Lewis, Nathan S. ;

Atwater, Harry A. .

NANO LETTERS, 2008, 8 (02) :710-714

[9] Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices [J].

Kempa, Thomas J. ;

Tian, Bozhi ;

Kim, Dong Rip ;

Hu, Jinsong ;

Zheng, Xiaolin ;

Lieber, Charles M. .

NANO LETTERS, 2008, 8 (10) :3456-3460

[10] Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires [J].

Larsson, Magnus W. ;

Wagner, Jakob B. ;

Wallin, Mathias ;

Hakansson, Paul ;

Froberg, Linus E. ;

Samuelson, Lars ;

Wallenberg, L. Reine .

NANOTECHNOLOGY, 2007, 18 (01)

← 1 2 3 →