Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

被引：158

作者：

Larsson, Magnus W.

Wagner, Jakob B.

Wallin, Mathias

Hakansson, Paul

Froberg, Linus E.

Samuelson, Lars

Wallenberg, L. Reine

机构：

[1] Lund Univ, nCHREM, SE-22100 Lund, Sweden

[2] Lund Univ, Div Solid Mech, SE-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 01期

关键词：

D O I：

10.1088/0957-4484/18/1/015504

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

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页数：8

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