Strain state in semiconductor quantum dots on surfaces: a comparison of electron microscopy and finite element calculations

被引：14

作者：

Carlsson, A

Wallenberg, LR

Persson, C

Seifert, W

机构：

[1] Univ Lund, Ctr Chem & Chem Engn, Natl Ctr HREM, S-22100 Lund, Sweden

[2] Univ Lund, Dept Solid Mech, S-22100 Lund, Sweden

[3] Univ Lund, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

SURFACE SCIENCE | 1998年 / 406卷 / 1-3期

关键词：

electron microscopy; epitaxy; gallium phosphide; growth; indium phosphide; self-assembly; semiconductor-semiconductor thin film structures; single crystal epitaxy;

D O I：

10.1016/S0039-6028(98)00084-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：48 / 56

页数：9

共 14 条

[1] SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS [J].