Directional CdS nanowires fabricated by chemical bath deposition

被引：77

作者：

Zhang, H ^{[1
]}

Ma, XY ^{[1
]}

Xu, J ^{[1
]}

Niu, JJ ^{[1
]}

Sha, J ^{[1
]}

Yang, DR ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 246卷 / 1-2期

关键词：

nanomaterials; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)01900-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Directional US nanowires have been fabricated by using chemical bath deposition (CBD) and porous anodic aluminum oxide (AAO) template. X-ray diffraction and selected area electron diffraction show that the nanowires are hexagonal polycrystalline in nature. Transmission electron microscopy (TEM) reveals that the diameters of nanowires are about 60 nm. Furthermore, the high-resolution TEM illustrates the lattice images of {002}, {101} and {100} planes in the nanowires. The directional growth of nanowires is verified by scanning electron microscopy. It is believed that the ion-by-ion mechanism dictates the CB13 of US nanowires within the pores of AAO template. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：108 / 112

页数：5

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