Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

被引:97
作者
Chueh, William C. [1 ]
Haile, Sossina M. [1 ]
机构
[1] CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
CHEMICAL CAPACITANCE; MIXED CONDUCTORS; SINGLE-CRYSTALS; IMPEDANCE; TRANSPORT; NONSTOICHIOMETRY; SEMICONDUCTORS; MODEL; LA0.6SR0.4COO3-DELTA; BEHAVIOR;
D O I
10.1039/b910903j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Small polaron carrier density in epitaxial, doped CeO2 thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.
引用
收藏
页码:8144 / 8148
页数:5
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