Photoluminescence in implanted and doped silicon near room temperature

被引：5

作者：

Matsubara, Ichiro ^{[1
]}

Sasahara, Shingo

Mishina, Tomobumi

Ishibashi, Yasuhiko

Kobayashi, Toshihiko

Nakahara, Jun'ichiro

机构：

[1] Hokkaido Univ, Div Phys, Sapporo, Hokkaido 0600810, Japan

[2] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 08期

关键词：

D O I：

10.1002/pssb.200541220

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photo-excited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1893 / 1897

页数：5

共 7 条

[1] PHONON STRUCTURES OF FORBIDDEN-INDIRECT TRANSITIONS IN TLCL AND TLBR [J].

FUJII, A ;

NAKAHARA, J ;

KOBAYASHI, K ;

FUJII, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (04) :1218-1224

[2]

ISHIBASHI Y, 2004, REV HIGH PRESS SCI T, V14, P93

[3] Silicon-based light emission after ion implantation [J].

Kittler, M ;

Arguirov, T ;

Fischer, A ;

Seifert, W .

OPTICAL MATERIALS, 2005, 27 (05) :967-972

[4] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PHYSICAL REVIEW, 1958, 111 (05) :1245-1254

[5] INDIRECT-FORBIDDEN TRANSITIONS IN TICI AND TIBR [J].

NAKAHARA, J ;

KOBAYASHI, K ;

FUJII, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (05) :1312-1318

[6] An efficient room-temperature silicon-based light-emitting diode [J].

Ng, WL ;

Lourenço, MA ;

Gwilliam, RM ;

Ledain, S ;

Shao, G ;

Homewood, KP .

NATURE, 2001, 410 (6825) :192-194

[7] Silicon-based light emitting diode material studied under high pressure [J].

Prins, AD ;

Ishibashi, Y ;

Sasahara, S ;

Nakahara, J ;

Lourenco, MA ;

Gwilliam, RM ;

Kobayashi, T ;

Nagata, A ;

Homewood, KP .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (14) :3387-3390

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