Silicon-based light emission after ion implantation

被引：38

作者：

Kittler, M

Arguirov, T

Fischer, A

Seifert, W

机构：

[1] IHP Microelect, D-15236 Frankfurt, Germany

[2] BTU Cottbus, Lehrstuhl Expt Phys 2, Mat Wissensch, D-03044 Cottbus, Germany

[3] BTU, Joint Lab, IHP, D-03044 Cottbus, Germany

来源：

OPTICAL MATERIALS | 2005年 / 27卷 / 05期

关键词：

D O I：

10.1016/j.optmat.2004.08.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electroluminescence of boron and phosphorus implanted samples has been studied for various implantation and annealing conditions. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. The band-to-band luminescence of phosphorus implanted diodes is observed to increase by more than one order of magnitude upon rising the sample temperature from 80 K to 300 K and a maximum internal quantum efficiency of 2% has been reached at 300 K. The remarkably high band-to-band luminescence is attributed to a high bulk Shockley-Read-Hall lifetime, likely promoted by the gettering action of the implanted phosphorus. The anomalous temperature behavior of the efficiency can be explained by a temperature dependence of the lifetime characteristic of shallow traps. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：967 / 972

页数：6

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