TEMPERATURE-DEPENDENCE OF RADIATIVE RECOMBINATION COEFFICIENT IN SILICON

[1] BAGAEV VS, 1971, FIZ TVERD TELA+, V13, P389

[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[3] BARDEEN J, 1954, PHOTOCONDUCTIVITY C, P146

[4] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &

[5] BLINOV LM, 1967, SOV PHYS-SOLID STATE, V9, P2537

[6] RECOMBINATION KINETICS OF EXCITONIC MOLECULES AND FREE EXCITONS IN INTRINSIC SILICON [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1552 - &

[7] DIMMOCK JO, 1967, SEMICONDUCT SEMIMET, V3, P259

[8] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 14 - 22

[9] SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (01): : 139 - 144

[10] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389

[1] BAGAEV VS, 1971, FIZ TVERD TELA+, V13, P389

[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[3] BARDEEN J, 1954, PHOTOCONDUCTIVITY C, P146

[4] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &

[5] BLINOV LM, 1967, SOV PHYS-SOLID STATE, V9, P2537

[6] RECOMBINATION KINETICS OF EXCITONIC MOLECULES AND FREE EXCITONS IN INTRINSIC SILICON [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1552 - &

[7] DIMMOCK JO, 1967, SEMICONDUCT SEMIMET, V3, P259

[8] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 14 - 22

[9] SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (01): : 139 - 144

[10] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389