Electron transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the effects of disorder and electron traps

被引:32
作者
van Mensfoort, S. L. M. [1 ,2 ]
Billen, J. [2 ]
Vulto, S. I. E. [2 ]
Janssen, R. A. J. [1 ]
Coehoorn, R. [1 ,2 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys Mol Mat & Nanosyst, NL-5600 MB Eindhoven, Netherlands
[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
关键词
CHARGE-TRANSPORT; HOLE TRANSPORT; SEMICONDUCTORS; POLYMERS;
D O I
10.1103/PhysRevB.80.033202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of a combined experimental and modeling study of electron transport in a blue-emitting polyfluorene-based copolymer in sandwich-type devices are presented. We show how, for wide temperature and layer thickness ranges, an accurate and internally consistent drift-diffusion model description of the voltage-dependent current density can be obtained. We employ an adapted form of the "extended Gaussian disorder model," within which the density of states (DOS) is described as a superposition of a Gaussian DOS and an exponential DOS ("trap states"), characterized by only a small set of physically meaningful parameters. A comparison is made with the hole mobility reported for related polymers.
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页数:4
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