Enhanced ferroelectric properties of multilayer SrBi2Ta2O9/SrBi2 Nb2O9 thin films for NVRAM applications

被引：32

作者：

Ortega, N. ^{[1
]}

Bhattacharya, P. ^{[1
]}

Katiyar, R. S. ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 130卷 / 1-3期

关键词：

thin films; PLD; SBT-SBN; ferroelectric properties;

D O I：

10.1016/j.mseb.2006.02.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric SrBi2Ta2O9/SrBi2Nb2O9 (SBT/SBN) multilayer thin films with various stacking periodicity were deposited on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition technique. The X-ray diffraction patterns indicated that the perovskite phase was fully formed with polycrystalline structure in all the films. The Raman spectra showed the frequency of the O-Ta-O stretching mode for multilayer and single layer SrBi2(Ta0.5Nb0.5)(2)O-9 (SBNT) samples was similar to 827-829 cm(-1), which was in between the stretching mode frequency in SBT (similar to 813 cm(-1)) and SBN (similar to 834 cm(-1)) thin films. The dielectric constant was increased from 300 (SBT) to similar to 373 at 100 kHz in the double layer SBT/SBN sample with thickness of each layer being similar to 200 nm. The remanent polarization (2P(r)) for this film was obtained similar to 41.7 mu C/cm(2), which is much higher, compared to pure SBT film (similar to 19.2 mu C/cm(2)). The coercive field of this double layer film (67 kV/cm) was found to be lower than SBN film (98 kV/cm). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：36 / 40

页数：5

共 29 条

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