Enhanced ferroelectric properties in laser-ablated SrBi2Nb2O9 thin films on platinized silicon substrate

Non-c-axis-oriented SrBi2Nb2O9 (SBN) thin films were grown on Pt/TiO2/SiO2/Si substrates using the pulsed-laser-deposition technique. X-ray diffraction results confirmed the textured growth of SBN thin films along (115) and (200) orientations. The increase in the value of the dielectric permittivity and decrease in the tangential loss of the films with an increase in annealing temperature were attributed to grain size dependence. SBN thin films annealed at 750 degreesC exhibited a maximum value of the dielectric constant of similar to346 with a dissipation factor of 0.02. Thin films with certain deposition parameters exhibited the highest remanent polarization (P-r) and coercive field, 25.7 muC/cm2 and 198 kV/cm, respectively. There was minimal (<20%) degradation in the switchable polarization (P-*-P-boolean AND) after 10(10) switching cycles. At lower field, the leakage current follows ohmic behavior, and at higher field, up to 100 kV/cm, the leakage current density was about 5x10(-7) A/cm(2). (C) 2002 American Institute of Physics.